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Tips survival mendaki gunung: Begini langkah darurat jika terpisah dari rombongan

Ringkasan Berita: Panduan keselamatan mendaki menekankan penggunaan prinsip S.T.O.P (Sit, Think, Observe, Plan) sebagai ...
IEEE

Performance Improvement by Blanket Boron Implant in the Sigma-Shaped Trench Before the Embedded SiGe Source/Drain Formation for 28-nm PMOSFET

Abstract: The blanket boron implant (BBI) in the sigma-shaped trench before the embedded SiGe (eSiGe) source/drain (S/D) formation for 28-nm PMOSFET is proposed in this letter. It is demonstrated that ...