Now researchers at Imec and Ghent University have demonstrated a fully-integrated single-chip microwave photonics system, ...

Mitsubishi Electric has developed a compact 7GHz band GaN power amplifier module (PAM) for 5G-Advanced base station with what ...

Researchers from Kyoto Institute of Technology are claiming to have broken new ground by demonstrating the first vertical rutile GeO 2 Schottky barrier diode (rutile GeO 2 is a tetragonal crystal ...

The EPC9196 has been validated in real-world conditions, powering a 3-kW servo motor at 150 VDC and 60 kHz switching ...

GaN-on-SiC epitaxial wafer company SweGaN has appointed Pontus de Laval, senior advisor at one of SweGaN’s major shareholders ...

Compound Semiconductor™ is an Angel Business Communications publication.

This funding has been awarded by the Spanish Ministry of Industry and Tourism under the second call of the Strategic Project ...

Recent patent filings emphasise critical aspects of power GaN technology such as gate design and packaging, resulting in ...

Working with the company III/V-Reclaim, scientists at the Fraunhofer Institute for Solar Energy Systems ISE have succeeded in ...

Compound Semiconductor™ is an Angel Business Communications publication.

Japan's National Institute of Information and Communications Technology (NICT) in collaboration with Sony Semiconductor has ...

“Indium oxide contains oxygen-vacancy defects, which facilitate carrier scattering and thus lower device stability,” says ...