High-reliability rad hard MOSFETs undergo extensive screening and quality conformance testing to ensure that devices perform to specification in the harshest environments. For Defense Logistics Agency ...
Toshiba is test-sampling shipments of the TW007D120E, 1,200V trench-gate SiC mosfet primarily intended for power supply ...
Cree Inc., a maker of silicon carbide (SiC) power devices, has introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky diode performance ...
The reliability of typical SiC MOSFETs is degraded by increased On-resistance when its body diodes are bipolar energized [3] during reverse conduction operation [4]. Toshiba SiC MOSFETs alleviate this ...
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